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| NTE2526 (NPN) & NTE2527 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector-Emitter Saturation Voltage D High Current and High fT D Excellent Linearity of hFE D Fast Switching Time Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Collector Power Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product NTE2526 NTE2527 Output Capacitance NTE2527 NTE2526 Cob VCB = 10V, f = 1MHz Symbol ICBO IEBO hFE fT Test Conditions VCB = 100V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 500mA VCE = 5V, IC = 3A VCE = 10V, IC = 500mA Min - - 140 40 - - - - Typ - - - - 180 130 40 65 Max Unit 1.0 1.0 400 - - - - - MHz MHz pF pF A A Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Collector-Emitter Saturation Voltage NTE2526 NTE2527 Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Turn-On Time Storage Time NTE2526 NTE2527 Fall Time tf VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg IC = 2A, IB = 200mA IC = 10A, IE = 0 IC = 1mA, RBE = IE = 10A, IC = 0 VCC = 50V, VBE = -5V, 10IB1 = -10IB2 = IC =2A, Pulse Width = 20s, Duty Cycle 1%, Note 1 Symbol VCE(sat) Test Conditions IC = 2A, IB = 200mA Min - - - 120 100 6 - - - Typ 150 200 0.9 - - - 100 900 800 50 Max Unit 400 500 1.2 - - - - - - mV mV V V V V ns ns ns ns Note 1. For NTE2527, the polarity is reversed. .256 (6.5) .197 (5.0) .059 (1.5) .090 (2.3) .002 (0.5) .275 (7.0) B C E .295 (7.5) .002(0.5) .090 (2.3) |
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